Varian Semiconductor Equipment Associates, Inc. will collaborate with Synopsis, a leader in software and IP for semiconductor design and manufacturing, to develop Technology CAD (TCAD) models for cryogenic ion implantation. The simulation afforded through these models will reduce process development costs and enable quicker development of advanced CMOS and memory technologies.
Since ion implantation causes disruption of the crystal structure of silicon, performance is adversely impacted as devices shrink. Enabling ion implantation to occur at reduced wafer temperatures curbs some of this damage, leading to minimized device leakage and widening process margins. Synopsis’ models will be based on experimental data from Varian’s cryogenic implant process.
“Today semiconductor manufacturers face tremendous challenges in improving device performance, achieving high product yield, reducing process R&D costs and meeting time-to-market targets. Therefore, it is increasingly critical for simulation to support novel process techniques to reduce technology development time and cost,” said Dr Yuri Erokhin, senior director for strategic technologies at Varian. “Cryogenic ion implant has been proven to significantly improve transistor performance and is a key enabler in the manufacture of advanced devices.”
